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Carbon Thin Film was sucessfully deposited on top of silicon (111) substrate with and without HF treatment to the silicon substrate. Carbon thin film was deposited using Unbalance Magetron DC Sputtering. Silicon surface which been modified using HF 1% solution create more uniform thin films. AFM, SE...

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Main Author: CHANDRA DARMAWAN (NIM : 10208006); Pembimbing : Dr. Eng. Yudi Darma, CHRISTIAN
Format: Final Project
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/18214
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:18214
spelling id-itb.:182142017-09-27T11:45:17Z#TITLE_ALTERNATIVE# CHANDRA DARMAWAN (NIM : 10208006); Pembimbing : Dr. Eng. Yudi Darma, CHRISTIAN Indonesia Final Project INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/18214 Carbon Thin Film was sucessfully deposited on top of silicon (111) substrate with and without HF treatment to the silicon substrate. Carbon thin film was deposited using Unbalance Magetron DC Sputtering. Silicon surface which been modified using HF 1% solution create more uniform thin films. AFM, SEM, and EDX results show that surface modification using HF solution enhancing carbon thin film deposition. Furthermore, annealing process and raman spectroscopy characterization was done to studied the thermal stability of carbon thin film on silicon substrate. Raman spectroscopy results show at 6000C carbon thin film relatively stable, while at 9000C carbon thin film showing structural changes. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description Carbon Thin Film was sucessfully deposited on top of silicon (111) substrate with and without HF treatment to the silicon substrate. Carbon thin film was deposited using Unbalance Magetron DC Sputtering. Silicon surface which been modified using HF 1% solution create more uniform thin films. AFM, SEM, and EDX results show that surface modification using HF solution enhancing carbon thin film deposition. Furthermore, annealing process and raman spectroscopy characterization was done to studied the thermal stability of carbon thin film on silicon substrate. Raman spectroscopy results show at 6000C carbon thin film relatively stable, while at 9000C carbon thin film showing structural changes.
format Final Project
author CHANDRA DARMAWAN (NIM : 10208006); Pembimbing : Dr. Eng. Yudi Darma, CHRISTIAN
spellingShingle CHANDRA DARMAWAN (NIM : 10208006); Pembimbing : Dr. Eng. Yudi Darma, CHRISTIAN
#TITLE_ALTERNATIVE#
author_facet CHANDRA DARMAWAN (NIM : 10208006); Pembimbing : Dr. Eng. Yudi Darma, CHRISTIAN
author_sort CHANDRA DARMAWAN (NIM : 10208006); Pembimbing : Dr. Eng. Yudi Darma, CHRISTIAN
title #TITLE_ALTERNATIVE#
title_short #TITLE_ALTERNATIVE#
title_full #TITLE_ALTERNATIVE#
title_fullStr #TITLE_ALTERNATIVE#
title_full_unstemmed #TITLE_ALTERNATIVE#
title_sort #title_alternative#
url https://digilib.itb.ac.id/gdl/view/18214
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