STRUCTURE CHARACTERIZATION ANALYZED OF ZINC OXIDE THIN FILMS DOPED INDIUM OXIDE (IN2O3) RESULTS OF DC SPUTTERING DEPOSITION
In this final project, we conducted IZO thin film deposition by DC sputtering deposition method. A thin layer of Indium Zinc Oxide is deposited with several variation of parameters such substrate temperature, and variations in composition of indium doped. In this research, indium composition was var...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/19202 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | In this final project, we conducted IZO thin film deposition by DC sputtering deposition method. A thin layer of Indium Zinc Oxide is deposited with several variation of parameters such substrate temperature, and variations in composition of indium doped. In this research, indium composition was varied by 2%, 5% and 8%, out of total composition of indium and zinc oxide. In this final project, the influence of indium doping variation of the impurity that occurs on the host zinc oxide were analyzed. For the analyzes, is carried two kinds of structural characterization, using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectrometer (EDS) and X-Ray Diffraction (XRD). EDS results showed the elemental composition that appears on the film and proves that a thin layer successfully grown. SEM results showed a thin layer of the surface topography of Indium Zinc Oxide, which can be observed that the grains of the IZO with 5% doped likely to spread more evenly than the IZO with 8% doped. Then XRD shows that the best crystal quality IZO is owned by 5% doped, mainly due to grain size, lattice parameter values and the best peak shape analysis IZO is owned by 5% doped. |
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