Effect of Hydrogen Dilution to The Result of Silicon Nanowire Growth Grown by HWC-in Plasma-VHF-PECVD on a Silver Catalyst

• Main Author: MARDIAN KARTIWA (NIM : 10208070); Pembimbing : Prof. Toto Winata, Ph.D , GILANG
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/20133
• Institution: Institut Teknologi Bandung

Silicon nanowire (SiNW) were grown on an object-glass substrate using HWC-in plasma-VHF-PECVD and catalyzed by silver nanocatalyst. Two kind of silver thin film, each made by evaporate 10 and 2,5 mg of silver were annealed at 3800C for a different annealing time, in this case is 40 and 1 minute. Characterization result show that both of them were contain 5% of silver but has a different in diameter. Then silicon nanowire‟s growth using HWC-in plasma-VHF-PECVD were performed. During the growth, hydrogen gas was given in a certain flowrate. This method known as dilution. The hydrogen‟s flowrate will be set at 0, 35, and 41 sccm .Meanwhile, the other parameters such as growth temperature, chamber preassure, and rf power were kept constant at an optimum value based on the previous experiment. Finally, we conduct SEM, FTIR, and XRD characterization to analyze the effect of hydrogen dilution to the nanowire‟s morphologyl and crystallinity. It conclude that 35 sccm of hydrogen‟s flowrate will reduce the 𝑆𝑖 −𝐻 and 𝐴𝑔 = 𝑂 bonding as well as give rise to an Si peak and four Ag peaks in XRD pattern, but 41 sccm of hydrogen will impede plasma‟s ignition so the growth can‟t be performed.