A STUDY OF STRUCTURE CALCULATION AND ELECTRONIC PROPERTIES OF GALLIUM NITRIDE (GaN) DOPED RARE EARTH (Eu, Er, Tm) USING DFT METHOD
Gallium Nitride (GaN) is a semiconductor that has a direct and wide energy band gap. Research GaN doped Rare Earth (RE) is very interesting related to their use in software development optoelectronics. Performed electronic structure calculations GaN doped with RE is based on the theory of DFT. The m...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/20788 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
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