STUDI STRUKTUR KRISTAL FILM TIPIS GALIUM NITRIDA DITUMBUHKAN DENGAN REAKTOR PLASMA ASSISTED MOCVD
<br><b>Abstrak</br></b>Thin film gallium nitride has been grown on (0001) sapphire substrates using Plasma-assisted Metalorganic Chemical Vapor Deposition reactor. Trimethy lgallium (TMG) is used as a group III precursor with H2 gas as carrier, and as a group V precursor, N2...
Saved in:
| Main Author: | |
|---|---|
| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/2285 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |