STUDI STRUKTUR KRISTAL FILM TIPIS GALIUM NITRIDA DITUMBUHKAN DENGAN REAKTOR PLASMA ASSISTED MOCVD

• Main Author: Suparta, Wayan
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/2285
• Institution: Institut Teknologi Bandung

<br><b>Abstrak</br></b>Thin film gallium nitride has been grown on (0001) sapphire substrates using Plasma-assisted Metalorganic Chemical Vapor Deposition reactor. Trimethy lgallium (TMG) is used as a group III precursor with H2 gas as carrier, and as a group V precursor, N2 is used. N2 is used as to surly N radicals of N2 gases, too. The preliminary growth process is to grown buffer layer using (TMG = 0,8 scam and N2 = 90 scam) obtained film thikness about 0,025 pm. Furthermore, optimize of growth parameter is studied with variation of temperature grown between 560 to 640 °C, cleaning effect on subrates surface, and VM ratio variation from 162,5 to 325. From the result X-ray diffraction characterization at growth temperature 640 °C and VIII ratio = 162,5 we obtained GaN thin film in the form of wurzite (0002) structrured single crystal with FWHM 0,25 degree. Ultra Violet — Visible (UVVis) spectrocopy result at room temperature showed that bandgap width of GaN optical spectrum at 3,40 eV, respectively. In the future work, the GaN thin film and other III - Nitride semiconductor compound or their heterostructures can be fabricated as high quality optoelectronic devices.