FOTOLUMINESENSI FILM TINS GALIUM NITRIDA YANG DITUMBUHKAN DENGAN METODE PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION
<b></i>Abstract:</b><i><p align=\"justify\"> <br /> Gallium Nitride is a direct band-gap semiconductor with Eg=3,4 eV. Therefore it potential, in optoelectronic applications, such as light emitting diodes and lasers operating in the blue-violet region....
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/5010 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |