FOTOLUMINESENSI FILM TINS GALIUM NITRIDA YANG DITUMBUHKAN DENGAN METODE PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION
<b></i>Abstract:</b><i><p align=\"justify\"> <br /> Gallium Nitride is a direct band-gap semiconductor with Eg=3,4 eV. Therefore it potential, in optoelectronic applications, such as light emitting diodes and lasers operating in the blue-violet region....
Saved in:
| Main Author: | |
|---|---|
| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/5010 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b></i>Abstract:</b><i><p align=\"justify\"> <br />
Gallium Nitride is a direct band-gap semiconductor with Eg=3,4 eV. Therefore it potential, in optoelectronic applications, such as light emitting diodes and lasers operating in the blue-violet region. <br />
Photoluminescence (PL) is non-destructive and contact method for optic characterization. The material is excited by a He-Cd laser (? =325nm). The emitted-PL is collected and focused by a lens and analyzed by a monocromator. Photomultiplier was used as a detector and a lock-in amplifier used for signal recovery. Control of instrument and data acgnisition are performed by computer, therefore the PL spectra can be obtained directly. <br />
The PL spectra of GaN thin film showed same features, such that, peak at 3,35 eV which correspond to the band gap and two peak at 2,8 eV and 2,9 eV which associated with gallium antisite (GaN) and nitrogen vacancy (VN).. Yellow luminescence centered around at 2,1eV-2,2 eV was not detected. It reveal that the grown Films is rich-gallium GaN <br />
<br />
|
|---|