MODELING OF ELECTRONIC DEVICES CHARACTERISTICS BASED ON ARMCHAIR GRAPHENE NANORIBBON MATERIAL FOR LOW POWER AND HIGH SPEED DEVICE APPLICATION

Miniaturization of silicon complementary metal–oxide–semiconductor (CMOS) devices has given remarkable improvements to computer performance such as switching speed, density, and functionality. However, the continuous reduction of silicon CMOS device dimension has resulted in high power consump...

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Bibliographic Details
Main Author: SUHENDI (NIM : 30210007), ENDI
Format: Dissertations
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/26936
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Institution: Institut Teknologi Bandung
Language: Indonesia