MODELING OF ELECTRONIC DEVICES CHARACTERISTICS BASED ON ARMCHAIR GRAPHENE NANORIBBON MATERIAL FOR LOW POWER AND HIGH SPEED DEVICE APPLICATION
Miniaturization of silicon complementary metal–oxide–semiconductor (CMOS) devices has given remarkable improvements to computer performance such as switching speed, density, and functionality. However, the continuous reduction of silicon CMOS device dimension has resulted in high power consump...
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Main Author: | SUHENDI (NIM : 30210007), ENDI |
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Format: | Dissertations |
Language: | Indonesia |
Online Access: | https://digilib.itb.ac.id/gdl/view/26936 |
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Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
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