Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors

Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors

10.1143/JJAP.49.04DJ10

Saved in:
Bibliographic Details
Main Authors: Lam, K.-T., Chin, S.-K., Seah, D.W., Bala Kumar, S., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82207
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82207

Similar Items