Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors
10.1143/JJAP.49.04DJ10
Saved in:
Main Authors: | Lam, K.-T., Chin, S.-K., Seah, D.W., Bala Kumar, S., Liang, G. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82207 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
by: Da, H., et al.
Published: (2014) -
Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
by: Da, H., et al.
Published: (2014) -
Device physics and characteristics of graphene nanoribbon tunneling FETs
by: Chin, S.-K., et al.
Published: (2014) -
Width effects in ballistic graphene nanoribbon FETs
by: Liang, G.
Published: (2014) -
Graphene nanoribbon tunneling field-effect transistors with a semiconducting and a semimetallic heterojunction channel
by: Da, H., et al.
Published: (2014)