Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors
10.1143/JJAP.49.04DJ10
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82207 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-82207 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-822072024-11-13T21:21:50Z Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors Lam, K.-T. Chin, S.-K. Seah, D.W. Bala Kumar, S. Liang, G. ELECTRICAL & COMPUTER ENGINEERING 10.1143/JJAP.49.04DJ10 Japanese Journal of Applied Physics 49 4 PART 2 - 2014-10-07T04:26:38Z 2014-10-07T04:26:38Z 2010-04 Article Lam, K.-T., Chin, S.-K., Seah, D.W., Bala Kumar, S., Liang, G. (2010-04). Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors. Japanese Journal of Applied Physics 49 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.04DJ10 00214922 http://scholarbank.nus.edu.sg/handle/10635/82207 000277301300170 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1143/JJAP.49.04DJ10 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Lam, K.-T. Chin, S.-K. Seah, D.W. Bala Kumar, S. Liang, G. |
| format |
Article |
| author |
Lam, K.-T. Chin, S.-K. Seah, D.W. Bala Kumar, S. Liang, G. |
| spellingShingle |
Lam, K.-T. Chin, S.-K. Seah, D.W. Bala Kumar, S. Liang, G. Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| author_sort |
Lam, K.-T. |
| title |
Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| title_short |
Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| title_full |
Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| title_fullStr |
Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| title_full_unstemmed |
Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| title_sort |
effect of ribbon width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82207 |
| _version_ |
1821216431412346880 |