Characterization of gallium nitride materials for high-frequency and high-power devices

• 主要作者: Yusuf Anindita Wibawa.
• 其他作者: K Radhakrishnan
• 格式: Final Year Project
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Materials::Material testing and characterization
• 在線閱讀: http://hdl.handle.net/10356/17065
• 機構: Nanyang Technological University

In recent years, a significant progress has been made in the development of III-V Nitrides based devices. Materials such as Aluminium Nitride, Gallium Nitride, Indium Nitride and their alloys have been attractive due to the wide band-gap characteristic. AlGaN/GaN based heterostructures are consi...