Characterization of gallium nitride materials for high-frequency and high-power devices

• Main Author: Yusuf Anindita Wibawa.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Materials::Material testing and characterization
• Online Access: http://hdl.handle.net/10356/17065
• Institution: Nanyang Technological University

In recent years, a significant progress has been made in the development of III-V Nitrides based devices. Materials such as Aluminium Nitride, Gallium Nitride, Indium Nitride and their alloys have been attractive due to the wide band-gap characteristic. AlGaN/GaN based heterostructures are consi...