PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
<b>Abstract: </b><br> It has been grown polycrystalline silicon thin film on silicon wafer <111>, using Hot Wire Plasma Enhanced Chemical Vapor Deposition (HW-PECVD). Silane gas (SiH<sub>4</sub>), 10% diluted in H<sub>2</sub> was used as a gas source....
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/3044 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b>Abstract: </b><br> It has been grown polycrystalline silicon thin film on silicon wafer <111>, using Hot Wire Plasma Enhanced Chemical Vapor Deposition (HW-PECVD). Silane gas (SiH<sub>4</sub>), 10% diluted in H<sub>2</sub> was used as a gas source. Deposition rate varied from 8.95 Å/s to 14.57 Å/s for substrate temperatur 175°C to 275°C at filament temperature about 1000°C and 70 sccm flow rate of silane. XRD characterization showed peaks at crystal orientation <111>, <220>, and <311>. SEM characterization showed polycrystalline appearance with grain size between 373 Å to 682 Å at crystal orientation <111>. Dark conductivity of polycrystalline silicon obtained is from 1.38x10<sup>-5</sup> S/cm to 1.97x10<sup>-4</sup> S/cm. This high value is good enough for application as active layer in TFT. |
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