PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI

PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI

<b>Abstract: </b><br> It has been grown polycrystalline silicon thin film on silicon wafer <111>, using Hot Wire Plasma Enhanced Chemical Vapor Deposition (HW-PECVD). Silane gas (SiH<sub>4</sub>), 10% diluted in H<sub>2</sub> was used as a gas source....

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Main Author: P. Simanjuntak, Mariati
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/3044
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:3044
spelling id-itb.:30442005-10-01T12:39:26ZPENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI P. Simanjuntak, Mariati Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/3044 <b>Abstract: </b><br> It has been grown polycrystalline silicon thin film on silicon wafer <111>, using Hot Wire Plasma Enhanced Chemical Vapor Deposition (HW-PECVD). Silane gas (SiH<sub>4</sub>), 10% diluted in H<sub>2</sub> was used as a gas source. Deposition rate varied from 8.95 Å/s to 14.57 Å/s for substrate temperatur 175°C to 275°C at filament temperature about 1000°C and 70 sccm flow rate of silane. XRD characterization showed peaks at crystal orientation <111>, <220>, and <311>. SEM characterization showed polycrystalline appearance with grain size between 373 Å to 682 Å at crystal orientation <111>. Dark conductivity of polycrystalline silicon obtained is from 1.38x10<sup>-5</sup> S/cm to 1.97x10<sup>-4</sup> S/cm. This high value is good enough for application as active layer in TFT. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description <b>Abstract: </b><br> It has been grown polycrystalline silicon thin film on silicon wafer <111>, using Hot Wire Plasma Enhanced Chemical Vapor Deposition (HW-PECVD). Silane gas (SiH<sub>4</sub>), 10% diluted in H<sub>2</sub> was used as a gas source. Deposition rate varied from 8.95 Å/s to 14.57 Å/s for substrate temperatur 175°C to 275°C at filament temperature about 1000°C and 70 sccm flow rate of silane. XRD characterization showed peaks at crystal orientation <111>, <220>, and <311>. SEM characterization showed polycrystalline appearance with grain size between 373 Å to 682 Å at crystal orientation <111>. Dark conductivity of polycrystalline silicon obtained is from 1.38x10<sup>-5</sup> S/cm to 1.97x10<sup>-4</sup> S/cm. This high value is good enough for application as active layer in TFT.
format Theses
author P. Simanjuntak, Mariati
spellingShingle P. Simanjuntak, Mariati
PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
author_facet P. Simanjuntak, Mariati
author_sort P. Simanjuntak, Mariati
title PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
title_short PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
title_full PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
title_fullStr PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
title_full_unstemmed PENGEMBANGAN SISTEM HOT WIRE UNTUK PENUMBUHAN LAPISAN TIPIS SILIKON POLIKRISTAL DENGAN KONDUKTIVITAS TINGGI
title_sort pengembangan sistem hot wire untuk penumbuhan lapisan tipis silikon polikristal dengan konduktivitas tinggi
url https://digilib.itb.ac.id/gdl/view/3044
_version_ 1820663328499826688

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