FABRIKASI DAN KARAKTERISASI LAPISAN TIPIS A-SIC:H DAN DEVAIS SEL SURYA A-SIC:H/A-SI:H DENGAN METODE PECVD

• Main Author: U R S A L, M
• Format: Theses
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/4598
• Institution: Institut Teknologi Bandung

<b></i>Abstract :</b><i><p align=\"justify\"> <br /> Characterization of thin film a-SiC:H, device p-i-n a-Si:H/ a-SiC:H solar cells and a-SiC:H/ a-Si:H tandem solar cells have been prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) method. Characterization of p, i, and n layers have been done to determine the thickness, deposition rate and optical bandgap.<p align=\"justify\"> <br /> The result shows that deposition rate and optical bandgap of thin film a-SiC:H were effected by ratio of fraction CH4/ SiH4 gas. If ratio of fraction CH4/ SiH4 increased, deposition rate would decrease and optical bandgap getting wide. Optical bandgap of thin film a-SiC:H dopped with B2H and PH3, would be smaller than optical bandgap of undopped thin film a-SiC:H.<p align=\"justify\"> <br /> Deposition of p-i-n a-SiC:H/ a-Si:H solar cells have been done by using Carbon-alloyed graded bandgap and without graded bandgap layer at the p/i interface. From cuicent-voltage chafacie isiics obtained that conversion effeciency of p-i-n a-SiC:H/ a-Si:l solar cells with Carbona-alloyed graded bandgap better (it-6,3 %) than the other one (3,71 %): <br /> Study of tandem structure a-SiC:Hf a-Si:H solar cells prepared by PECVD method, but it didn\'t give the result that we hope yet. This thing caused by impurity on ni/p2 interface and the thickness of each layer not optimum yet.