KONSTRUKSI ALAT METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) DAN ANALIS STRUKTUR LAPISAN TIPIS ZNO YANG DITUMBUHKANNYA

• Main Author: FransSangian, Hanny
• Format: Theses
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/4679

<b>Abstract :</b><p align=\"justify\"> <br /> <br /> <br /> A new design of Metalorganic Chemical Vapor Deposition (MOCVD) equipment was constructed. The analysis of its construction showed that out put variables, i.e; deposition rate and atom composition of ZnO thin film, depend on five control variables, i.e; water-carrier gas flow rate, metalorganic-carrier gas flow rate, system pressure, water bubbler temperature, and metalorganic bubbler temperature, which the change of bubbler temperature gives the biggest error. Undoped ZnO thin films were grown on substrate of Corning glass 7059 by using (DMZ,H20) and (DEZ,H20) reactant systems. It was found that the highest deposition rate was 10 Rm./h. It is five times higher than the published data. It was also found a crystal orientation transition temperature in which the orientation changes from (002) to (110) at a different temperature for each reactant systems. The transition was occured at 100 °C and 120 °C for (DMZ,H20) and (DEZ,H20) reactant system, respectively.<p align=\"justify\"> <br /> <br />