SIMULATION OF ELECTRICAL CHARACTERISTICS IN FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR WITH MASTER EQUATION METHOD

In this research, orthodox theory will be expounded to give an explanation over singleelectron tunnelling phenomenon in general. A simulation of SET devices will be conducted based on such model by utilizing Master Equation method as stochastic approach, that is determining the current density by...

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Bibliographic Details
Main Author: Arief Fachruddin, Muchammad
Format: Final Project
Language:Indonesia
Subjects:
Online Access:https://digilib.itb.ac.id/gdl/view/49393
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Institution: Institut Teknologi Bandung
Language: Indonesia