SIMULATION OF ELECTRICAL CHARACTERISTICS IN FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR WITH MASTER EQUATION METHOD

• Main Author: Arief Fachruddin, Muchammad
• Format: Final Project
• Language: Indonesia
• Subjects: Karya Umum
• Online Access: https://digilib.itb.ac.id/gdl/view/49393
• Institution: Institut Teknologi Bandung

In this research, orthodox theory will be expounded to give an explanation over singleelectron tunnelling phenomenon in general. A simulation of SET devices will be conducted based on such model by utilizing Master Equation method as stochastic approach, that is determining the current density by selecting proper probability of electron tunnelling in accordance with selected input parameters. The evaluated model, including Si QD SET and Ni nanogap SET, are demonstrated to show relevance of Master Equation method in computing electrical characteristics. The result displays an exponentially suppressed current as expected through the length of Coulomb blockade, and the corresponding charging energy are 8 meV and 53 meV respectively. In addition, the discovery of giant magnetoresistance brings new interest at electronic transport of spin-polarized nanoscopic system. One of the observed transport has also been found in ferromagnetic SET, either with magnetic or nonmagnetic island. An extension of Master Equation method accommodating interplay of charge and spin degrees of freedom allows observation of such phenomenon, particularly in the form of tunnel magnetoresistance. Transport shows indication of SET, namely Coulomb staircase, Coulomb blockade and its related oscillations. Evidently, simulation obtains TMR oscillating by the value of 0.1 (magnetic) and 0.018 (nonmagnetic).