SIMULATION OF ELECTRICAL CHARACTERISTICS IN FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR WITH MASTER EQUATION METHOD
In this research, orthodox theory will be expounded to give an explanation over singleelectron tunnelling phenomenon in general. A simulation of SET devices will be conducted based on such model by utilizing Master Equation method as stochastic approach, that is determining the current density by...
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| Format: | Final Project |
| Language: | Indonesia |
| Subjects: | |
| Online Access: | https://digilib.itb.ac.id/gdl/view/49393 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | In this research, orthodox theory will be expounded to give an explanation over singleelectron
tunnelling phenomenon in general. A simulation of SET devices will be conducted
based on such model by utilizing Master Equation method as stochastic approach, that is
determining the current density by selecting proper probability of electron tunnelling in
accordance with selected input parameters. The evaluated model, including Si QD SET and
Ni nanogap SET, are demonstrated to show relevance of Master Equation method in
computing electrical characteristics. The result displays an exponentially suppressed current
as expected through the length of Coulomb blockade, and the corresponding charging energy
are 8 meV and 53 meV respectively. In addition, the discovery of giant magnetoresistance
brings new interest at electronic transport of spin-polarized nanoscopic system. One of the
observed transport has also been found in ferromagnetic SET, either with magnetic or
nonmagnetic island. An extension of Master Equation method accommodating interplay of
charge and spin degrees of freedom allows observation of such phenomenon, particularly in
the form of tunnel magnetoresistance. Transport shows indication of SET, namely Coulomb
staircase, Coulomb blockade and its related oscillations. Evidently, simulation obtains TMR
oscillating by the value of 0.1 (magnetic) and 0.018 (nonmagnetic).
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