TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI

• Main Author: DARMA, YUDI
• Format: Theses
• Language: Indonesia
• Subjects: Fisika
• Online Access: https://digilib.itb.ac.id/gdl/view/565
• Institution: Institut Teknologi Bandung

Wafer bonding process have been done to support SOI wafer fabrication especially in ELTRAN and SMARTCUT methods. The good quality of wafer bonding was yield by using electrostatic forces (stress >2x105 N/m`\') with carbon electrodes that uses electrical potential around 24 V at 1150°C. On the other hand wafer bonding process can be done by produce O-H clusters that can be made in H,O,:H 2 SO4 (1: 1) mixture and continuing with heating treatment at 1150 °C (stress > 105 N/m- ). Besides, thinning and selective etching are also important process in SOI fabrication. KOH 30% have been chosen to etch silicon layers and yield 2,4 pm/minute etching rate at 80 °C. HF:H202 (1:5) mixture have been used to selective etching in porous silicon and give 0.1388 gm/minute etching rate at room temparature and 0.27 pm/minute at 100° C.