�THE EFFECT OF DC-SPUTTERING PARAMETERS AND Al DOPING ON CONDUCTIVITY AND TRANSPARENCY OF TiO2 THIN FILMS�

• Main Authors: , laith rabih mohammed, , Dr. Pekik Nurwantoro
• Format: Theses and Dissertations NonPeerReviewed
• Published: [Yogyakarta] : Universitas Gadjah Mada 2013
• Subjects: ETD
• Online Access: https://repository.ugm.ac.id/126204/; http://etd.ugm.ac.id/index.php?mod=penelitian_detail&sub=PenelitianDetail&act=view&typ=html&buku_id=66407
• Institution: Universitas Gadjah Mada

Titanium dioxide (TiO2) thin films have been deposited on glass substrates under various conditions by using a homemade DC reactive sputtering technique. The TiO2 thin film has unique characteristics and economical alternative material for transparent conductivity oxide thin films compared with other materials. In this study, titanium (Ti) has been used as a target while argon (Ar) and oxygen (O2) gases were used as the sputtering and reactive gases, respectively. The effect of DC reactive Sputtering Technique Parameters have been investigated on both optical (transparency) and electrical (conductivity) characteristics of TiO2 thin films at various conditions by varied deposition time, substrate temperature, ratio of O2/Ar and target-substrate distance. The rang of deposition time is taken between 1 hour to 4 hours. The substrate temperature was 150, 200 and 250 ºC while the ratio of O2/Ar was 5/95, 10/90, 15/85, 20/80 and 25/75. We take three values of target-substrate distance were 25, 30 and 35 mm, respectively. The optimum conditions of DC reactive sputtering technique was set the temperatures of substrate (Ts), ratio of O2/Ar, deposition time (Dt) and targetsubstrate distance (Dts), respectively at the values 250ºC, 10:90, 3, 5 hours and 25 mm. It has been succeeded to produce TiO2 thin films with high transparency and conductivity to use them as �transparent electrode� in solar cells or use it with the smart windows. The effect of energies and doses of implant Al ions have been studied on conductivity and transparency of TiO2 thin films. For Al doping processes, we used the implantation technique. The used energies were 60, 70 and 80 keV while the doses were 2x1015, 1x1016 and 1x1017ion/cm2. The optimum conditions of implantation technique were set for the doses and energy of Al ions respectively at the values 1x1017ion/cm2 and 80 keV. We have succeeded in improving the electrical conductivity of TiO2 thin films to 10,000 times after the implantation processes on TiO2 thin films with Al ions while the transparency of TiO2 thin films has been slightly decreased after the implantation processes. The thickness, grain size and the band gap have been also successfully estimated. These parameters as will as the weight percentage of the rutile phase (WR) have been affected by varying the deposition conditions such as deposition time, substrate temperature, target-substrate distance and O2/Ar ratio. The resistance of TiO2 thin films has been measured by using a calibrated IV meter while the transparency, microstructure and component of TiO2 thin films have been investigated respectively by using UV-VIS spectrophotometer, XRD and SEM (EDX).