ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN

• Main Author: ANWER, JAHANZEB ANWER
• Format: Thesis
• Language: English
• Published: 2011
• Online Access: http://utpedia.utp.edu.my/2862/1/Masters_Thesis-_Jahanzeb_Anwer.pdf; http://utpedia.utp.edu.my/2862/
• Institution: Universiti Teknologi Petronas

As the MOSFET dimensions scale down towards nanoscale level, the reliability of circuits based on these devices decreases. Hence, designing reliable systems using these nano-devices is becoming challenging. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal (RTS) noise sources to provide a more rigorous noise environment for the simulation of circuits build on nanoscale technologies. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The redesigned MRF is termed as Improved-MRF. The CMOS, MRF and Improved-MRF designs were simulated under application of highly noisy inputs. On the basis of simulations conducted for several test circuits, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives. The number of transistors, on the other hand increased from a factor of 9 to 15 from MRF to Improved-MRF respectively (as compared to the CMOS). Therefore, in order to provide a trade-off between reliability and the area overhead required for obtaining a fault-tolerant circuit, a novel parameter called as ‘Reliable Area Index’ (RAI) is introduced in this research work. The value of RAI exceeds around 1.3 and 40 times for MRF and Improved-MRF respectively as compared to CMOS design which makes Improved- MRF to be still 30 times more efficient circuit design than MRF in terms of maintaining a suitable trade-off between reliability and area-consumption of the circuit.