ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN
As the MOSFET dimensions scale down towards nanoscale level, the reliability of circuits based on these devices decreases. Hence, designing reliable systems using these nano-devices is becoming challenging. Therefore, a mechanism has to be devised that can make the nanoscale systems perform relia...
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my-utp-utpedia.28622017-01-25T09:42:32Z http://utpedia.utp.edu.my/2862/ ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN ANWER, JAHANZEB ANWER As the MOSFET dimensions scale down towards nanoscale level, the reliability of circuits based on these devices decreases. Hence, designing reliable systems using these nano-devices is becoming challenging. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal (RTS) noise sources to provide a more rigorous noise environment for the simulation of circuits build on nanoscale technologies. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The redesigned MRF is termed as Improved-MRF. The CMOS, MRF and Improved-MRF designs were simulated under application of highly noisy inputs. On the basis of simulations conducted for several test circuits, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives. The number of transistors, on the other hand increased from a factor of 9 to 15 from MRF to Improved-MRF respectively (as compared to the CMOS). Therefore, in order to provide a trade-off between reliability and the area overhead required for obtaining a fault-tolerant circuit, a novel parameter called as ‘Reliable Area Index’ (RAI) is introduced in this research work. The value of RAI exceeds around 1.3 and 40 times for MRF and Improved-MRF respectively as compared to CMOS design which makes Improved- MRF to be still 30 times more efficient circuit design than MRF in terms of maintaining a suitable trade-off between reliability and area-consumption of the circuit. 2011-03 Thesis NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/2862/1/Masters_Thesis-_Jahanzeb_Anwer.pdf ANWER, JAHANZEB ANWER (2011) ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN. Masters thesis, UNIVERSITI TEKNOLOGI PETRONAS. |
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As the MOSFET dimensions scale down towards nanoscale level, the reliability of
circuits based on these devices decreases. Hence, designing reliable systems using
these nano-devices is becoming challenging. Therefore, a mechanism has to be
devised that can make the nanoscale systems perform reliably using unreliable circuit
components. The solution is fault-tolerant circuit design. Markov Random Field
(MRF) is an effective approach that achieves fault-tolerance in integrated circuit
design. The previous research on this technique suffers from limitations at the design,
simulation and implementation levels. As improvements, the MRF fault-tolerance
rules have been validated for a practical circuit example. The simulation framework is
extended from thermal to a combination of thermal and random telegraph signal
(RTS) noise sources to provide a more rigorous noise environment for the simulation
of circuits build on nanoscale technologies. Moreover, an architecture-level
improvement has been proposed in the design of previous MRF gates. The redesigned
MRF is termed as Improved-MRF.
The CMOS, MRF and Improved-MRF designs were simulated under application
of highly noisy inputs. On the basis of simulations conducted for several test circuits,
it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10
times more noise-tolerant than the CMOS alternatives. The number of transistors, on
the other hand increased from a factor of 9 to 15 from MRF to Improved-MRF
respectively (as compared to the CMOS). Therefore, in order to provide a trade-off
between reliability and the area overhead required for obtaining a fault-tolerant
circuit, a novel parameter called as ‘Reliable Area Index’ (RAI) is introduced in this
research work. The value of RAI exceeds around 1.3 and 40 times for MRF and
Improved-MRF respectively as compared to CMOS design which makes Improved-
MRF to be still 30 times more efficient circuit design than MRF in terms of
maintaining a suitable trade-off between reliability and area-consumption of the
circuit. |
format |
Thesis |
author |
ANWER, JAHANZEB ANWER |
spellingShingle |
ANWER, JAHANZEB ANWER ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN |
author_facet |
ANWER, JAHANZEB ANWER |
author_sort |
ANWER, JAHANZEB ANWER |
title |
ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE
FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN |
title_short |
ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE
FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN |
title_full |
ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE
FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN |
title_fullStr |
ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE
FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN |
title_full_unstemmed |
ENHANCEMENT OF MARKOV RANDOM FIELD MECHANISM TO ACHIEVE
FAULT-TOLERANCE IN NANOSCALE CIRCUIT DESIGN |
title_sort |
enhancement of markov random field mechanism to achieve
fault-tolerance in nanoscale circuit design |
publishDate |
2011 |
url |
http://utpedia.utp.edu.my/2862/1/Masters_Thesis-_Jahanzeb_Anwer.pdf http://utpedia.utp.edu.my/2862/ |
_version_ |
1739830968608358400 |