DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications
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Universiti Malaysia Perlis (UniMAP)
2017
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my.unimap-499532017-11-21T01:26:20Z DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications Murugapandiyan, P. Ravimaran, S. William, J. murugavlsi@gmail.com HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects Link to publisher's homepage at http://ijneam.unimap.edu.my/ The DC and RF performance of 30nm gate length enhancement mode (E-mode)AlGaN/AlN/GaN High electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have investigated using Synopsys TCAD tool drift diffusion model at room temperature. The proposed device features are recessed T - gate structure, InGaN back barrier and Si₃N4 passivated device surface. The HEMT exhibits a maximum drain current density of 2.1 [A/mm], transconductance gm of 1680 [mS/mm], current gain cut-off frequency frequency ft of 220 GHz and power gain cut-off frequency fmax of 245 GHz. At room temperature the measured carrier mobility (µ), sheet charge carrier density (ns) and breakdown voltage are 1400 (sm²/V - s), 1.6 X10¹³(Cm‾²) and 14V respectively. The excellent DC and microwave performance of the proposed HEMT is promising candidate for future high power RF applications. 2017-10-12T06:32:04Z 2017-10-12T06:32:04Z 2017 Article International Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 111-122 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953 en Universiti Malaysia Perlis (UniMAP) |
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HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects |
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HEMT Back-barrier Recessed gate Cut-off frequency Regrown ohmic contact Short channel effects Murugapandiyan, P. Ravimaran, S. William, J. DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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murugavlsi@gmail.com |
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murugavlsi@gmail.com Murugapandiyan, P. Ravimaran, S. William, J. |
| format |
Article |
| author |
Murugapandiyan, P. Ravimaran, S. William, J. |
| author_sort |
Murugapandiyan, P. |
| title |
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications |
| title_short |
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications |
| title_full |
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications |
| title_fullStr |
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications |
| title_full_unstemmed |
DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications |
| title_sort |
dc and microwave characteristics of aln spacer based al₀.₃₇ga₀.₆₃n/gan hemt on sic substrates for high power rf applications |
| publisher |
Universiti Malaysia Perlis (UniMAP) |
| publishDate |
2017 |
| url |
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953 |
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1643802829710688256 |