DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

DC and microwave characteristics of AlN spacer based Al₀.₃₇Ga₀.₆₃N/GaN HEMT on SiC substrates for high power RF applications

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Bibliographic Details
Main Authors: Murugapandiyan, P., Ravimaran, S., William, J.
Other Authors: murugavlsi@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2017
Subjects:
HEMT
Back-barrier
Recessed gate
Cut-off frequency
Regrown ohmic contact
Short channel effects
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953
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Institution: Universiti Malaysia Perlis
Language: English

Internet

http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49953

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