Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device
In the fabrication of MOSFET devices, the process parameters play a very important role in deciding the MOSFET device's characteristics. The process parameter variations may contribute a significant impact on the dopant profiles that directly affect the device characteristics. These variations...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
Asian Research Publishing Network
2023
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| Institution: | Universiti Tenaga Nasional |