Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device

• Main Authors: Kaharudin K.E., Hamidon A.H., Salehuddin F., Ifwat Abd Aziz M.N., Ahmad I.
• Other Authors: 56472706900
• Format: Article
• Published: Asian Research Publishing Network 2023
• Institution: Universiti Tenaga Nasional

In the fabrication of MOSFET devices, the process parameters play a very important role in deciding the MOSFET device's characteristics. The process parameter variations may contribute a significant impact on the dopant profiles that directly affect the device characteristics. These variations...