Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio

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Bibliographic Details
Main Authors: Roslan A.F., Kaharudin K.E., Salehuddin F., Zain A.S.M., Ahmad I., Faizah Z.A.N., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Mohamad N.R., Hamid A.M.A.
Other Authors: 57203514087
Format: Conference Paper
Published: Institute of Physics Publishing 2023
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Institution: Universiti Tenaga Nasional
Description
Summary:Analysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratio

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