Effects of Texturing Silicon Wafer Surfaces Using Metal-Assisted Chemical Etching (MACE) Technique
Aspect ratio; Electrochemical etching; Gallium alloys; Gallium arsenide; Gallium nitride; Gold deposits; Hydrofluoric acid; III-V semiconductors; Indium phosphide; Nanowires; Porosity; Porous silicon; Scanning electron microscopy; Semiconducting indium gallium arsenide; Semiconducting indium phosphi...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Institution: | Universiti Tenaga Nasional |
| Summary: | Aspect ratio; Electrochemical etching; Gallium alloys; Gallium arsenide; Gallium nitride; Gold deposits; Hydrofluoric acid; III-V semiconductors; Indium phosphide; Nanowires; Porosity; Porous silicon; Scanning electron microscopy; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Silicon solar cells; Silicon wafers; Wide band gap semiconductors; Chemical etching technique; High aspect ratio; Homo-junctions; Lattice damage; Metal-assisted chemical etching; Novel methods; Semiconductor nanostructures; Silicon nanowire and reflectance; Silicon wafer surface; Texturing silicons; Reflection |
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