Process optimization approach in fine pitch Cu wire bonding

Process optimization approach in fine pitch Cu wire bonding

With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, w...

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Bibliographic Details
Main Authors: Wong B.K., Yong C.C., Eu P.L., Yap B.K.
Other Authors: 36992192300
Format: Conference paper
Published: 2023
Subjects:
Design of experiments
Dielectric materials
Optimization
Silicon compounds
Spheres
Thermal aging
Thermoelectric equipment
Wafer bonding
Aluminum pad
Ball diameter
Ball shear
Ball-shear test
Bond pad
Bonding parameters
Bonding quality
Critical factors
Critical response
Fine pitch
Wafer technology
Wire bonding
Wire
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Institution: Universiti Tenaga Nasional
Description
Summary:With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting bonding quality. Design of experiment and response of surface were used to optimize the bonding parameters. The wire pull and ball shear test at three thermal aging read points were studied. � 2011 IEEE.

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