Process optimization approach in fine pitch Cu wire bonding
With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, w...
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my.uniten.dspace-304752023-12-29T15:48:17Z Process optimization approach in fine pitch Cu wire bonding Wong B.K. Yong C.C. Eu P.L. Yap B.K. 36992192300 24726352800 55911544700 26649255900 Design of experiments Dielectric materials Optimization Silicon compounds Spheres Thermal aging Thermoelectric equipment Wafer bonding Aluminum pad Ball diameter Ball shear Ball-shear test Bond pad Bonding parameters Bonding quality Critical factors Critical response Fine pitch Wafer technology Wire bonding Wire With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting bonding quality. Design of experiment and response of surface were used to optimize the bonding parameters. The wire pull and ball shear test at three thermal aging read points were studied. � 2011 IEEE. Final 2023-12-29T07:48:17Z 2023-12-29T07:48:17Z 2011 Conference paper 10.1109/ICEDSA.2011.5959077 2-s2.0-80055092447 https://www.scopus.com/inward/record.uri?eid=2-s2.0-80055092447&doi=10.1109%2fICEDSA.2011.5959077&partnerID=40&md5=b5475216c175b77de9b5449fc14838a6 https://irepository.uniten.edu.my/handle/123456789/30475 5959077 147 151 Scopus |
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Design of experiments Dielectric materials Optimization Silicon compounds Spheres Thermal aging Thermoelectric equipment Wafer bonding Aluminum pad Ball diameter Ball shear Ball-shear test Bond pad Bonding parameters Bonding quality Critical factors Critical response Fine pitch Wafer technology Wire bonding Wire |
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Design of experiments Dielectric materials Optimization Silicon compounds Spheres Thermal aging Thermoelectric equipment Wafer bonding Aluminum pad Ball diameter Ball shear Ball-shear test Bond pad Bonding parameters Bonding quality Critical factors Critical response Fine pitch Wafer technology Wire bonding Wire Wong B.K. Yong C.C. Eu P.L. Yap B.K. Process optimization approach in fine pitch Cu wire bonding |
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With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting bonding quality. Design of experiment and response of surface were used to optimize the bonding parameters. The wire pull and ball shear test at three thermal aging read points were studied. � 2011 IEEE. |
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36992192300 |
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36992192300 Wong B.K. Yong C.C. Eu P.L. Yap B.K. |
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Conference paper |
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Wong B.K. Yong C.C. Eu P.L. Yap B.K. |
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Wong B.K. |
title |
Process optimization approach in fine pitch Cu wire bonding |
title_short |
Process optimization approach in fine pitch Cu wire bonding |
title_full |
Process optimization approach in fine pitch Cu wire bonding |
title_fullStr |
Process optimization approach in fine pitch Cu wire bonding |
title_full_unstemmed |
Process optimization approach in fine pitch Cu wire bonding |
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process optimization approach in fine pitch cu wire bonding |
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2023 |
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1806427529041412096 |