Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

• Main Authors: Kaharudin, K.E., Salehuddin, F., Soin, N., Zain, A.S.M., Aziz, M.N.I.A., Ahmad, I.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5194
• Institution: Universiti Tenaga Nasional

The limitation of Poly-Si/ SiO2 devices in producing a greater value of drive current (ION) has become a major issue, especially for very small scale devices. It is believed that the problem may be resolved by introducing metalgate/ high-k dielectrics to replace traditional Poly-Si/SiO2 technology....