Cobalt silicide and titanium silicide effects on nano devices

• Main Authors: Elgomati, H.A., Majlis, B.Y., Salehuddin, F., Ahmad, I., Zaharim, A., Hamid, F.A.
• Format: Conference Proceeding
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:80/jspui/handle/123456789/5235
• Institution: Universiti Tenaga Nasional

This paper describes growth process of the two silicide Sub-nanometer devices and the different effects of having cobalt silicide and titanium silicide on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact b...