Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

• Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Hashim, U., Apte, P.R.
• Format: Article
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:80/jspui/handle/123456789/5238
• Institution: Universiti Tenaga Nasional

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance cha...