InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.
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| Main Authors: | , , , , |
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| Format: | Conference Proceeding |
| Language: | en_US |
| Published: |
2017
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| Institution: | Universiti Tenaga Nasional |
| Language: | en_US |
| Summary: | InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE. |
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