InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.
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my.uniten.dspace-59872018-02-07T08:24:19Z InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE. 2017-12-08T07:48:15Z 2017-12-08T07:48:15Z 2012 Conference Proceeding 10.1109/NSSMIC.2011.6154421 en_US InAs avalanche photodiodes for X-ray detection. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 2071-2073). [6154421] Institute of Electrical and Electronics Engineers Inc. |
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InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE. |
| format |
Conference Proceeding |
| author |
Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. |
| spellingShingle |
Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product |
| author_facet |
Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. |
| author_sort |
Ker, P.J. |
| title |
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product |
| title_short |
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product |
| title_full |
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product |
| title_fullStr |
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product |
| title_full_unstemmed |
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product |
| title_sort |
inas electron avalanche photodiodes with 580 ghz gain-bandwidth product |
| publishDate |
2017 |
| _version_ |
1644493816182341632 |