InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

• Main Authors: Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
• Format: Conference Proceeding
• Language: en_US
• Published: 2017
• Institution: Universiti Tenaga Nasional

InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.