Characterization of semiconductor nanowires using optical tweezers
We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and a...
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American Chemical Society
2011
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Online Access: | http://psasir.upm.edu.my/id/eprint/24834/1/Characterization%20of%20semiconductor%20nanowires%20using%20optical%20tweezers.pdf http://psasir.upm.edu.my/id/eprint/24834/ http://pubs.acs.org/doi/abs/10.1021/nl200720m |
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my.upm.eprints.248342016-08-24T02:09:48Z http://psasir.upm.edu.my/id/eprint/24834/ Characterization of semiconductor nanowires using optical tweezers Reece, Peter J. Toe, Wen Jun Wang, Fan Paiman, Suriati Gao, Qiang Tan, Hark Hoe Jagadish, Chennupati We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through Brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires. American Chemical Society 2011-06-08 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/24834/1/Characterization%20of%20semiconductor%20nanowires%20using%20optical%20tweezers.pdf Reece, Peter J. and Toe, Wen Jun and Wang, Fan and Paiman, Suriati and Gao, Qiang and Tan, Hark Hoe and Jagadish, Chennupati (2011) Characterization of semiconductor nanowires using optical tweezers. Nano Letters, 11 (6). pp. 2375-2381. ISSN 1530-6984; ESSN: 1530-6992 http://pubs.acs.org/doi/abs/10.1021/nl200720m 10.1021/nl200720m |
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We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through Brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires. |
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Article |
author |
Reece, Peter J. Toe, Wen Jun Wang, Fan Paiman, Suriati Gao, Qiang Tan, Hark Hoe Jagadish, Chennupati |
spellingShingle |
Reece, Peter J. Toe, Wen Jun Wang, Fan Paiman, Suriati Gao, Qiang Tan, Hark Hoe Jagadish, Chennupati Characterization of semiconductor nanowires using optical tweezers |
author_facet |
Reece, Peter J. Toe, Wen Jun Wang, Fan Paiman, Suriati Gao, Qiang Tan, Hark Hoe Jagadish, Chennupati |
author_sort |
Reece, Peter J. |
title |
Characterization of semiconductor nanowires using optical tweezers |
title_short |
Characterization of semiconductor nanowires using optical tweezers |
title_full |
Characterization of semiconductor nanowires using optical tweezers |
title_fullStr |
Characterization of semiconductor nanowires using optical tweezers |
title_full_unstemmed |
Characterization of semiconductor nanowires using optical tweezers |
title_sort |
characterization of semiconductor nanowires using optical tweezers |
publisher |
American Chemical Society |
publishDate |
2011 |
url |
http://psasir.upm.edu.my/id/eprint/24834/1/Characterization%20of%20semiconductor%20nanowires%20using%20optical%20tweezers.pdf http://psasir.upm.edu.my/id/eprint/24834/ http://pubs.acs.org/doi/abs/10.1021/nl200720m |
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