Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated t...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/14829/1/paper5.pdf http://eprints.usm.my/14829/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Sains Malaysia |
| Language: | English |
| Summary: | The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.
|
|---|