Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated t...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/14829/1/paper5.pdf http://eprints.usm.my/14829/ |
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| Institution: | Universiti Sains Malaysia |
| Language: | English |
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