Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated t...

Full description

Saved in:
Bibliographic Details
Main Authors: L, S Chuah, Hassan, Z., Abu Hassan, H
Format: Conference or Workshop Item
Language:English
Published: 2007
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/14829/1/paper5.pdf
http://eprints.usm.my/14829/
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Sains Malaysia
Language: English
id my.usm.eprints.14829
record_format eprints
spelling my.usm.eprints.14829 http://eprints.usm.my/14829/ Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. L, S Chuah Hassan, Z. Abu Hassan, H QC1 Physics (General) The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14829/1/paper5.pdf L, S Chuah and Hassan, Z. and Abu Hassan, H (2007) Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
L, S Chuah
Hassan, Z.
Abu Hassan, H
Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
description The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.
format Conference or Workshop Item
author L, S Chuah
Hassan, Z.
Abu Hassan, H
author_facet L, S Chuah
Hassan, Z.
Abu Hassan, H
author_sort L, S Chuah
title Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
title_short Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
title_full Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
title_fullStr Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
title_full_unstemmed Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
title_sort optical characterization of gan thin film grown on si(111) by radio-frequency plasma-assisted molecular beam epitaxy.
publishDate 2007
url http://eprints.usm.my/14829/1/paper5.pdf
http://eprints.usm.my/14829/
_version_ 1643702777375883264

Similar Items