Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device

Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...

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Bibliographic Details
Main Authors: Fauziyah, Salehuddin, Ahmad, Ibrahim, Fazrena, Azlee Hamid, Azami , Zaharim
Format: Article
Language:English
Published: International Network for Scientific Information Publication (INSI) 2011
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.utem.edu.my/id/eprint/10547/1/%28J5%29_AJBAS_5%281%29_55-61.pdf
http://eprints.utem.edu.my/id/eprint/10547/
http://www.ajbasweb.com/
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Institution: Universiti Teknikal Malaysia Melaka
Language: English

Internet

http://eprints.utem.edu.my/id/eprint/10547/1/%28J5%29_AJBAS_5%281%29_55-61.pdf
http://eprints.utem.edu.my/id/eprint/10547/
http://www.ajbasweb.com/

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