Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
International Network for Scientific Information Publication (INSI)
2011
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/10547/1/%28J5%29_AJBAS_5%281%29_55-61.pdf http://eprints.utem.edu.my/id/eprint/10547/ http://www.ajbasweb.com/ |
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| Institution: | Universiti Teknikal Malaysia Melaka |
| Language: | English |