Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device

• Main Authors: Fauziyah, Salehuddin, Ahmad, Ibrahim, Fazrena, Azlee Hamid, Azami , Zaharim
• Format: Article
• Language: English
• Published: International Network for Scientific Information Publication (INSI) 2011
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.utem.edu.my/id/eprint/10547/1/%28J5%29_AJBAS_5%281%29_55-61.pdf; http://eprints.utem.edu.my/id/eprint/10547/; http://www.ajbasweb.com/
• Institution: Universiti Teknikal Malaysia Melaka

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...