Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf http://eprints.utem.edu.my/id/eprint/14005/ http://www.ijsret.org/ |
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| Institution: | Universiti Teknikal Malaysia Melaka |
| Language: | English |
| Summary: | N-drift doping concentration has important contribution
in determining the breakdown voltage and on-resistance
of the device. It should be well considered because
higher N- drift doping concentration can minimize the
on-resistance of the device, but also lowering breakdown
voltage of the device that expected to be high. It also has
a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the
variation of N-drift doping concentration can be used to
optimize the VDMOS transistor performance. |
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