Design consideration of N-drift region doping concentration in high voltage VDMOS transistor

N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device...

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Main Authors:	Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof, Wijaya Bayu Murti, Wijaya Bayu Murti, Norhayati binti Soin, N.Soin
Format:	Article
Language:	English
Published:	2014
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf http://eprints.utem.edu.my/id/eprint/14005/ http://www.ijsret.org/
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Institution:	Universiti Teknikal Malaysia Melaka
Language:	English

id	my.utem.eprints.14005
record_format	eprints
spelling	my.utem.eprints.140052015-05-28T04:35:32Z http://eprints.utem.edu.my/id/eprint/14005/ Design consideration of N-drift region doping concentration in high voltage VDMOS transistor Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin TK Electrical engineering. Electronics Nuclear engineering N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device that expected to be high. It also has a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the variation of N-drift doping concentration can be used to optimize the VDMOS transistor performance. 2014-07 Article NonPeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof and Wijaya Bayu Murti, Wijaya Bayu Murti and Norhayati binti Soin, N.Soin (2014) Design consideration of N-drift region doping concentration in high voltage VDMOS transistor. International Journal of Scientific Research Engineering & Technology (IJSRET), 3 (4). pp. 764-766. ISSN 2278-0882 http://www.ijsret.org/
institution	Universiti Teknikal Malaysia Melaka
building	UTEM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknikal Malaysia Melaka
content_source	UTEM Institutional Repository
url_provider	http://eprints.utem.edu.my/
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
description	N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device that expected to be high. It also has a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the variation of N-drift doping concentration can be used to optimize the VDMOS transistor performance.
format	Article
author	Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin
author_facet	Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin
author_sort	Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof
title	Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_short	Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_full	Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_fullStr	Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_full_unstemmed	Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_sort	design consideration of n-drift region doping concentration in high voltage vdmos transistor
publishDate	2014
url	http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf http://eprints.utem.edu.my/id/eprint/14005/ http://www.ijsret.org/
_version_	1665905569867759616

Design consideration of N-drift region doping concentration in high voltage VDMOS transistor

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