Design consideration of N-drift region doping concentration in high voltage VDMOS transistor

• Main Authors: Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof, Wijaya Bayu Murti, Wijaya Bayu Murti, Norhayati binti Soin, N.Soin
• Format: Article
• Language: English
• Published: 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf; http://eprints.utem.edu.my/id/eprint/14005/; http://www.ijsret.org/
• Institution: Universiti Teknikal Malaysia Melaka

N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device...